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Discrete Semiconductors
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Infineon Technologies (BAV 199 E6433)
PartNo:
BAV 199 E6433
Manufacturers:
Infineon Technologies
Qty:
19888
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Description:
General Purpose, Power, Switching Silicon Low Leakage Diode
PDF:
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Product Information:
RoHS:
Details
Product:
Peak Reverse Voltage:
85 V
Forward Continuous Current:
0.2 A
Max Surge Current:
4.5 A
Configuration:
Dual
Recovery Time:
1500 ns
Forward Voltage Drop:
1.25 V at 0.15 A
Maximum Reverse Leakage Current:
0.005 uA at 75 V
Maximum Power Dissipation:
Operating Temperature Range:
+ 150 C
Mounting Style:
SMD/SMT
Package / Case:
SOT-23
Packaging:
Reel
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MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms
STP15N65M5
MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS
SI1913DH-T1-E3
MOSFET DUAL P-CH 20V (D-S)
SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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